電子信息專(zhuān)業(yè)英語(yǔ)

前言

　　近年來(lái)，隨著科學(xué)技術(shù)的迅猛發(fā)展，高等教育的教學(xué)思想和教學(xué)模式也在不斷地發(fā)展，這就要求高等院校教材進(jìn)行相應(yīng)的調(diào)整，重新定位，以適應(yīng)新的社會(huì)發(fā)展需求，培養(yǎng)新一代實(shí)用綜合型人才?！　‰娮有畔⑹钱?dāng)今國(guó)內(nèi)外發(fā)展最迅速、技術(shù)更新最快的工程領(lǐng)域之一，電子信息專(zhuān)業(yè)英語(yǔ)對(duì)學(xué)習(xí)電子信息新知識(shí)和新技術(shù)起著非常重要的作用?！　　峨娮有畔?zhuān)業(yè)英語(yǔ)》是一本突出高等教育實(shí)用特點(diǎn)的電子信息專(zhuān)業(yè)英語(yǔ)教材，內(nèi)容涉及電工電子基礎(chǔ)、儀器儀表使用、傳感器技術(shù)、通信技術(shù)等方面，基本覆蓋了現(xiàn)代電子信息的各個(gè)領(lǐng)域，同時(shí)收錄了一些電子信息新技術(shù)領(lǐng)域發(fā)展前沿方面的文章（如太陽(yáng)能、電子紙、藍(lán)牙技術(shù)和3G等）。課文內(nèi)容豐富，題材廣泛，通俗易懂，選擇的文章實(shí)用性強(qiáng)并盡量保證學(xué)生能利用已有專(zhuān)業(yè)知識(shí)理解課文內(nèi)容。每課課后有詞匯、注釋、練習(xí)及閱讀等。在《電子信息專(zhuān)業(yè)英語(yǔ)》書(shū)后附有課文參考譯文及部分練習(xí)參考答案，供讀者參考對(duì)照。另外，書(shū)后還附有電子專(zhuān)業(yè)詞匯和科技英語(yǔ)閱讀與翻譯技巧相關(guān)知識(shí)，供相關(guān)專(zhuān)業(yè)讀者參考?！　　峨娮有畔?zhuān)業(yè)英語(yǔ)》由王菲、施亞齊擔(dān)任主編，并編寫(xiě)了第四、第五篇，董小瓊編寫(xiě)了第一篇，王俊清編寫(xiě)了第二篇，鄒淑云編寫(xiě)了第三篇?！　∮捎诰幷咚接邢?，時(shí)間倉(cāng)促，書(shū)中難免有紕漏和不足之處，請(qǐng)尊敬的教師、同學(xué)和廣大學(xué)者批評(píng)指正。

內(nèi)容概要

本書(shū)由電路基礎(chǔ)篇、儀表使用篇、傳感器篇、通信系統(tǒng)篇和新技術(shù)篇組成。電路基礎(chǔ)篇內(nèi)容包括電阻電容電感、二極管及其電路、三極管及其電路、邏輯門(mén)、集成電路和運(yùn)算放大器；儀表使用篇內(nèi)容包括萬(wàn)用表、示波器、信號(hào)發(fā)生器和直流電源；傳感器篇內(nèi)容包括電路元件和參數(shù)、電壓/頻率轉(zhuǎn)換器、光學(xué)傳感器、傳感器認(rèn)證插入測(cè)量和感溫火災(zāi)探測(cè)器；通信系統(tǒng)篇內(nèi)容包括時(shí)分復(fù)用、頻分復(fù)用、脈沖編碼調(diào)制、光纖通信和移動(dòng)通信；新技術(shù)篇內(nèi)容包括太陽(yáng)能、電子紙、藍(lán)牙技術(shù)和3G?！　”緯?shū)可作為高等院校電子信息專(zhuān)業(yè)的專(zhuān)業(yè)英語(yǔ)教材，也可供從事相關(guān)專(zhuān)業(yè)的工程技術(shù)人員參考使用。

書(shū)籍目錄

Chapter 1 Fundamentals of Electronics　Text 1  Resistance．Capacitance and Inductance　　Technical Words and Expressmns    Notes      Exercises    Reading　Text 2 Diode and Its Circuit  　　Technical Words and Expressions    Notes    Exercises      Reading　Text 3 Transistor and Its Circuit　　Technical Words and Expressions    Notes    Exercises      Reading　Text 4 Logic Gate  　　Technical Words and Expressions    Notes    Exercises    Reading　Text 5 Integrated Circuits　　Technical Words and Expressions    Notes    Exercises      Reading　Text 6 Operational Amplifier　　Technical Words and Expressions　　Exercises　　ReadingChapter 2  Measuring Instruments and Their Usage　Text 1  Using a Multimeter　　Technical Words and Expressions　　Exercises　　Reading　Text 2  Oscilloscope　　Technical Words and Expressions　　Exercises　　Reading　Text 3  Signal Generator　　Technical Words and Expressions　　Exercises 　　Reading　Text 4  Power Supply　　Technical Words and Expressions　　Exercises　　ReadingChapter 3  Sensors　Text 1  Circuit Elements and Parameters　　Technical Words and Expressions　　Notes　　Exercises　　Reading　Text 2  Voltage/Frequency Converters　　Technical Words and Expressions　　Exercises　　Reading　Text 3  Optical Sensors for Lightweights　　Technical Words and Expressions　　……Chapter 3　CommunicationsChapter 4  New Technology課文參考譯文附錄一　電子專(zhuān)業(yè)英語(yǔ)詞匯附錄二　科技英語(yǔ)閱讀與翻譯技巧

章節(jié)摘錄

　　In order to improve the powet device performance it is advantageous to have the 10w on。stateresistance of power BJTs with an insulai gate Input similar to that of a power MOSFET.TheDarlington configuration of the two devices has superior characteristics as compared to the discrete devices This hybrid device could be gated in the same way as a power MOSFET withlow on.state resistance because most of the output current is handled by the BJT.Because of thelow current gain of BJT，a MOSFET of equal size is required as a driver.A more powerfulapproach to oblain the maximum benefits of the MOS gate control and bipolar current conductionis to integrate the physics of MOSFET and BJT within the sanle semiconductor region·Thisconcept gave rise to the commercially available IGBTs with superior on state characteristics，goodswitching speed and exceDent safe operating arer.Comparedto power MOSFET the absence ofthe integral body diode can be considered as an advantage or disadvantage depending on theswitehing speed and current requirements.An external fast-recovery diode or a diode in the sanlcoackage call be used for specific applications.The IGBTs are replacing MOSFET in high voltageap，lications with lower conduction losses.They have on-state voltage and current densitycomparable to a power BJT with higher switching frequency.Although they exhibit fast torn。on，their turn.0ff is slower than a MOSFET because of current fall time.Also，IGBTs haveconsiderably less silicon area than similar rated power MOSFETs.Therefore，by replacing power MOSFETs with IGBTs.the efficiency is improved and cost is reduced.Additionally，IGBT isknown as a conductivity.modulated FET（COMFET），insulated gate transistor（IGT），and bipolar.mode MOSFET.

圖書(shū)封面

評(píng)論、評(píng)分、閱讀與下載

---

    電子信息專(zhuān)業(yè)英語(yǔ) PDF格式下載

---