硅超大規(guī)模集成電路工藝技術(shù)

內(nèi)容概要

　　《硅超大規(guī)模集成電路工藝技術(shù)：理論、實(shí)踐與模型》是美國斯坦福大學(xué)電氣工程系“硅超大規(guī)模集成電路制造工藝”課程所使用的教材，該課程是為電氣工程系微電子學(xué)專業(yè)的四年級(jí)本科生及一年級(jí)研究生開設(shè)的一門專業(yè)課。《硅超大規(guī)模集成電路工藝技術(shù)：理論、實(shí)踐與模型》最大的特點(diǎn)是，不僅詳細(xì)介紹了與硅超大規(guī)模集成電路芯片生產(chǎn)制造相關(guān)的實(shí)際工藝技術(shù)，而且還著得講解了這些工藝技術(shù)背后的科學(xué)工藝過程的物理圖像。同時(shí)全書還對(duì)每一步單項(xiàng)工藝技術(shù)所要用到的測量方法后面都附有相關(guān)內(nèi)容的參考文獻(xiàn)，同時(shí)還附有大量習(xí)題?！　?duì)于我國高等院校微電子學(xué)專業(yè)的教師及學(xué)生，《硅超大規(guī)模集成電路工藝技術(shù)：理論、實(shí)踐與模型》是一本不可多得的優(yōu)秀教材和教學(xué)參考書，并可供相關(guān)領(lǐng)域的工程技術(shù)人員學(xué)習(xí)參考。

作者簡介

　　James D.Plummer：于美國斯坦福大學(xué)獲得電氣工程博士學(xué)位。目前是斯坦福大學(xué)電氣工程系教授。Plummer博士已撰寫或與人合作撰寫了300多篇技術(shù)論文，并于1991年獲得了電化學(xué)協(xié)會(huì)頒發(fā)的“固態(tài)科學(xué)與技術(shù)獎(jiǎng)”。1996年，他被選入美國國家工程院。目前致力于硅設(shè)備與技術(shù)方面的研究。

書籍目錄

第1章	引言及歷史展望第2章	現(xiàn)代CMOS工藝技術(shù)第3章	晶體生長、晶圓片制造及硅晶圓片的基本特性第4章	半導(dǎo)體生產(chǎn)——潔凈室、晶圓片清洗與吸雜第5章	光刻第6章	熱氧化主硅/二氧化硅界面第7章	雜質(zhì)擴(kuò)散第8章	離子注入第9章	薄膜淀積第10章	刻蝕第11章	后道工藝技術(shù)附錄索引

章節(jié)摘錄

　　Silicon is unique among semiconductor materials in that its surface can be easily passivated with an oxide layer. The interface between Si and SiO2 is perhaps the most care-fully studied of all material interfaces and its electrical and mechanical properties as well as those of the oxide layer itself are almost ideal. SiOe layers are easily grown thermally on silicon or deposited on many substrates. They adhere well, they block the diffusion odorants and many other unwanted impurities, they are resistant to most of the chemicals used in silicon processing and yet can be easily patterned and etched with specific chemicals or dry etched with plasmas, they are excellent insulators, and they have stable and reproducible bulk properties, The interface that forms between Si and SiO2 has very few mechanical or electrical defects and is stable over time. These properties make MOS structures easy to build in silicon and they imply that silicon devices of all types are generally reliable and stable. Virtually all other semiconductor/insulator combinations suffer from one or more problems that significantly limit their applicability. We saw a number of applications of SiO2 layers in the CMOS technology example in Chapter 2. These included use as the gate dielectric layer in MOS devices, as a mask against implantation, as an isolation region laterally between adjacent devices, and as an insulator between metal layers in back-end processing. These and some other uses are illustrated in Figure 6-1. The SLA NTRS provides a roadmap for SiO2 and other insulating layers as part of its general technology requirements, Some of the key issues are summarized in Table 6-1[6.1]. Most of these requirements relate to oxides < 10 um since these are the critical gate insulators and tunneling oxides in modern MOS structures The last two rows in the table relate to thicker insulators used primarily for masking and in back-end processing. These insulating layers are normally deposited rather than thermally grown and will be discussed in more detail in Chapters 9 and 11. Even at room temperature, silicon exposed to an oxygen or air ambient will form a thin native oxide layer on its surface. This oxide rapidly covers the surface to a thickness of 0.5-1 um （5-10 A）. Growth then slows down and effectively stops after a few hours, with a final thickness on the order of 1-2 nm. Both the growth rate and the final native oxide thickness depend on the surface preparation and in particular on the presence or absence of chemical residues from cleaning procedures` For example, the SC-1 and SC-2cleaning procedures we discussed in Chapter 4 create chemical oxides on the silicon surface which are typically 1-2 um thick.

編輯推薦

　　《硅超大規(guī)模集成電路工藝技術(shù)：理論、實(shí)踐與模型》是美國斯坦福大學(xué)電氣工程系“硅超大規(guī)模集成電路制造工藝”課程所使用的教材，該課程是為電氣工程系微電子學(xué)專業(yè)的四年級(jí)本科生及一年級(jí)研究生開設(shè)的一門專業(yè)課。《硅超大規(guī)模集成電路工藝技術(shù)：理論、實(shí)踐與模型》最大的特點(diǎn)是，不僅詳細(xì)介紹了與硅超大規(guī)模集成電路芯片生產(chǎn)制造相關(guān)的實(shí)際工藝技術(shù)，而且還著重講解了這些工藝技術(shù)背后的科學(xué)原理。特別是對(duì)于每一步單項(xiàng)工藝技術(shù)，書中都通過工藝模型和工藝模擬軟件，非常形象直觀地給出了實(shí)際工藝過程的物理圖像。同時(shí)全書還對(duì)每一步單項(xiàng)工藝技術(shù)所要用到的測量方法做了詳細(xì)的介紹，對(duì)于工藝技術(shù)與工藝模型的未來發(fā)展趨勢也做了必要的分析討論。另外，《硅超大規(guī)模集成電路工藝技術(shù)：理論、實(shí)踐與模型》每一章后面都附有相關(guān)內(nèi)容的參考文獻(xiàn)，同時(shí)還附有大量習(xí)題。

圖書封面

圖書標(biāo)簽Tags

無

評(píng)論、評(píng)分、閱讀與下載

---

    硅超大規(guī)模集成電路工藝技術(shù) PDF格式下載

---