半導(dǎo)體器件基礎(chǔ)

內(nèi)容概要

本書(shū)不僅包括了量子力學(xué)、半導(dǎo)體物理和半導(dǎo)體器件（包括二極管、場(chǎng)效應(yīng)晶體管、雙極晶體管和光電器件）的基本工作原理等內(nèi)容，還寫(xiě)進(jìn)了現(xiàn)代半導(dǎo)體器件的最新進(jìn)展以及器件的實(shí)際應(yīng)用。例如：對(duì)于顯著影響現(xiàn)代小尺寸器件電學(xué)特性的二級(jí)效應(yīng)進(jìn)行了分析和公式推導(dǎo)，給出了描述小尺寸器件特性的最新的數(shù)學(xué)表達(dá)式；考慮到異質(zhì)結(jié)在場(chǎng)效應(yīng)器件、雙極器件和光電器件中的應(yīng)用日益增加，書(shū)中對(duì)半導(dǎo)體異質(zhì)結(jié)作了著重介紹；由于半導(dǎo)體制造設(shè)備和工藝技術(shù)的提高，“能帶工程”得以實(shí)現(xiàn)，隨之帶來(lái)了器件性能的提高，所以本書(shū)在重點(diǎn)介紹硅材料和硅器件的基礎(chǔ)上，還介紹了化合物半導(dǎo)體器件、合金器件（如SiGe，AlGaAs）和異質(zhì)結(jié)器件；本書(shū)還利用電路分析程序SPICE對(duì)器件的I -V特性進(jìn)行了模擬，對(duì)簡(jiǎn)單電路進(jìn)行了穩(wěn)態(tài)和瞬態(tài)分析。    本書(shū)不僅是一本很好的教科書(shū)，也很適合作為微電子和相關(guān)領(lǐng)域的工程技術(shù)人員的參考書(shū)。作者Betty Lise Anderson博士是美國(guó)俄亥俄州立大學(xué)工學(xué)院的電機(jī)工程教授，講授多門(mén)本科生和研究生的課程。曾經(jīng)在工業(yè)界工作過(guò)九年，有豐富的研究經(jīng)驗(yàn)，目前正在從事用于通訊、雷達(dá)和信息處理的光子學(xué)器件研究。因此,與實(shí)際器件應(yīng)用緊密結(jié)合也是本書(shū)的一個(gè)特色。

書(shū)籍目錄

CONTENTSPreface xiiiPA R T 1  Materials  Chapter 1 Electron Energy and States in Semiconductors   1.1 Introduction and Preview   1.2 A Brief History   1.3 Application to the Hydrogen Atom   1.4 Wave-Particle Duality   1.5 The Wave Function   1.6 The Electron Wave Function   1.7 A First Look at Optical Emission and Absorption   1.8 Crystal Structures, Planes, and Directions   1.9 Summary  1.10 Reading List   1.11 References   1.12 Review Questions   1.13 Problems  Chapter 2 Homogeneous Semiconductors   2.1 Introduction and Preview   2.2 Pseudo-Classical Mechanics for Electrons in Crystals   2.3 Conduction Band Structure   2.4 Valence Band Structure   2.5 Intrinsic Semiconductors   2.6 Extrinsic Semiconductors   2.7 The Concept of Holes   2.8 Density-of-States Functions for Electrons in Bands   2.9 Fermi-Dirac Statistics   2.10 Electron and Hole Distributions with Energy   2.11 Temperature Dependence of Carrier Concentrations in Nondegenerate Semiconductors   2.12 Degenerate Semiconductors   2.13 Summary   2.14 Reading List   2.15 References   2.16 Review Questions   2.17 Problems  Chapter 3 Current Flow in Homogeneous Semiconductors   3.1 Introduction   3.2 Drift Current   3.3 Carrier Mobility   3.4 Diffusion Current   3.5 Carrier Generation and Recombination   3.6 Optical Processes in Semiconductors   3.7 Continuity Equations   3.8 Minority Carrier Lifetime   3.9 Minority Carrier Diffusion Lengths   3.10 Quasi Fermi Levels   3.11 Summary   3.12 Reading List   3.13 References   3.14 Review Questions   3.15 Problems  Chapter 4 Nonhomogeneous Semiconductors ……PA R T 2  Diodes  Chapter 5 Prototype pn Homojunctions  Chapter 6 Additional Considerations for Diodes PA R T 3 Field-Effect Transistors  Chapter 7 The MOSFET  Chapter 8 Additional Considerations for FETs PA R T 4 Bipolar Junction Transistors  Chapter 9  Bipolar Junction Devices: Statics  Chapter 10 Time-Dependent Analysis of BJTs PA R T 5 Optoelectronic Devices  Chapter 11 Optoelectronic Devices Appendices

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