半導(dǎo)體物理與器件

內(nèi)容概要

本書是一本很好的英文教科書和參考書，與目前我國大學(xué)本科生的同類教材相比，這本書具有以下特點： 
    （1）全新的體系結(jié)構(gòu)。目前國內(nèi)相關(guān)專業(yè)的教學(xué)體系是先學(xué)理論物理（包括統(tǒng)計物理、量子力學(xué)等）、固體物理，再學(xué)半導(dǎo)體物理，最后學(xué)半導(dǎo)體器件，一般需要用2至3個學(xué)期來學(xué)完這些課程。這本書次上述課程的有關(guān)內(nèi)容有機地結(jié)合在一起，學(xué)生只需具有高等數(shù)學(xué)和大學(xué)物理的基礎(chǔ)，用1至2個學(xué)期時間就可以系統(tǒng)地學(xué)習(xí)到半導(dǎo)體物理與器件課程提供的內(nèi)容。
    （2）注重概念方法。從內(nèi)容的整體編排到具體內(nèi)容的敘述，都體現(xiàn)了突出物理概念、強調(diào)基本分析方法的指導(dǎo)思想。本書還采用了大量的插圖，幫助讀者理解概念。
    （3）可讀性強，便于自學(xué)。全書思路清晰，說理清楚，易于讀者理解和掌握。每章的開頭都有引言，告訴讀者可以從本章學(xué)到什么，應(yīng)該掌握什么；每章中都有例題和讀者自測題；每章的最后還有總結(jié)、復(fù)習(xí)提綱和大量習(xí)題（其中一些是計算機模擬的練習(xí)題）。 
    （4）內(nèi)容豐富，覆蓋面廣。本書除了介紹半導(dǎo)體物理外，對器件的介紹也相當(dāng)豐富。除了最基本和常用的BJT和MOSFET器件，還詳細介紹了半導(dǎo)體光電器件和功率器件。不僅講述器件的基本原理，而且介紹了器件的發(fā)展。每章后面的參考文獻更讓讀者可以了解到自己所需要的知識細節(jié)。

書籍目錄

Preface CHAPTER I  The Crystal Structure of Solids  Preview  1.1 Semiconductor Materials  1.2 Types of Solids  1.3 Space Lattices   1.3.1 Primitive and Unit Cell   1.3.2 Basic Crystal Structures   1.3.3 Crystal Planes and Miller Indices   1.3.4 The Diamond Structure  1.4 Atomic Bonding  1.5 Imperfections and Impurities in Solids   1.5.1 Imperfections in Solids   1.5.2 Impurities in Solids  1.6 Growth of Semiconductor Materials   1.6.1 Growth from a Melt   1.6.2 Epitaxial Growth  1.7 Summary  ProblemsCHAPTER 2  Introduction to Quantum Mechanics  Preview  2.1 Principles of Quantum Mechanics   2.1.1 Energy Quanta   2.1.2 Wave-Particle Duality   2.1.3 The Uncertainty Principle  2.2 Schrodinger's Wave Equation   2.2.1 The Wave Equation   2.2.2 Physical Meaning of the Wave Function   2.2.3 Boundary Conditions  2.3 Applications of Schrodinger's Wave Equation   2.3.1 Electron in Free Space   2.3.2 The Infinite Potential Well   2.3.3 The Step Potential Function   2.3.4 The Potential Barrier  2.4 Extensions of the Wave Theory to Atoms   2.4.1 The One-Electron Atom   2.4.2 The Periodic Table  2.5 Summary  ProblemsCHAPTER 3  Introduction to the Quantum Theory of Solids  Preview  3.1 Allowed and Forbidden Energy Bands   3.1.1 Fromation of Energy Bands   3.1.2 The Kronig-Penney Model   3.1.3 The k-Space Diagram  3.2 Electrical Conduction in Solids   3.2.1 The Energy Band and the Bond Model   3.2.2 Drift Current   3.2.3 Electron Effective Mass   3.2.4 Concept of the Hole   3.2.5 Metals,Insulators,and Semiconductors  3.3 Extension to Three Dimensions   3.3.1 The k-Space Diagrams of Si and GaAs   3.3.2 Additional Effective Mass Concepts  3.4 Density of States Function   3.4.1 Mathematical Derivation   3.4.2 Extension to Semiconductors  3.5 Statistical Mechanics   3.5.1 Statistical Laws   3.5.2 The Fermi-Dirac Probability Function   3.5.3 The Distribution Function and the Fermi Energy  3.6 Summary  ProblemsCHAPTER 4  The Semiconductor in Equilibrium  Preview  4.1 Charge Carriers in Semiconductors   4.1.1 Equilibrium Distribution of Electrons and Holes   4.1.2 The no and po Equations   4.1.3 The Intrinsic Carrier Concentration   4.1.4 The Intrinsic Fermi-Level  Position  4.2 Dopant Atoms and Energy Levels   4.2.1 Qualitative Description   4.2.2 Ionization Energy   4.2.3 Group III-V Semiconductors  4.3 The Extrinsic Semiconductor   4.3.1 Equilibrium Distribution of Electrons and Holes   4.3.2 The nopo Product   4.3.3 The Fermi-Dirac Integral   4.3.4 Degenerate and Nondegenerate Semiconducors  4.4 Statistics of Donors and Acceptors   4.4.1 Probability Function   4.4.2 Complete Ionization and Acceptors  4.5 Charge Neutrality   4.5.1 Compenated Semiconductors   4.5.2 Equilibrium Electron and Hole Concentrations  4.6 Position of Fermi Energy Level   4.6.1 Mathematical Derivation   4.6.2 Variation of Ep with Doping Concentration and Temperature   4.6.3 Relevance of the Fermi Energy  4.7 Summary  ProblemsCHAPTER 5 Carrier Transport PhenomenaPreview  5.1 Carrier Drift   5.1.1 Drift Current Density   5.1.2 Mobility Effects   5.1.3 Conductivity   5.1.4 Velocity Saturation  5.2 Carrier Diffusion   5.2.1 Diffusion Curent Density   5.2.2 Total Current Density  5.3 Graged Impurity Distribution   5.3.1 Induced Electric Fild   5.3.2 The Einstein Relation  5.4 The Hall Effect  5.5 Summary  ProblemsCHAPTER 6 Nonequilibrium Excess Carriers in SemiconductorsPreview  6.1 Carrier Generation and Recombination   6.1.1 The Semiconductor in Equilibrium    6.1.2 Excess Carrier Generation and Recombination  6.2 Characteristics of Excess Carriers   6.2.1 Comtinuity Equations   6.2.2 Time-Dependent Diffusion Equations  6.3 Ambipolar Transport   6.3.1 Derivation of the Ambipolar Transport Equation   6.3.2 Limits of Extrinsic Doping and Low Injection   6.3.3 Applications of the Ambipolar Transport Equation   6.3.4 Dielectric Relaxation Time Constant   6.3.5 Haymes-Shockley Experiment  6.4 Quasi-Fermi Energy Levels  6.5 Excess-Carrier Lifetime   6.5.1 Shockley-Read-Hall Theory of Recombination   6.5.2 Limits of Extrinsic Doping and Low Injection  6.6 Surface Effects   6.6.1 Surface States   6.6.2 Surface Recombination Velocity  6.7 Summary  ProblemsCHAPTER 7   The pn JunctionCHAPTER 8   The pn Junction DiodeCHAPTER 9   Metal-Semiconductor and Semiconductor HeterojunctionsCHAPTER 10   The Bipolar TransistorCHAPTER 11   Fundamentals of the Metal-Oxide-Semiconductor Field-Effect TransistorCHAPTER 12   Metal-Oxide-Semiconductor Field-Effect Transistor :Additional ConceptsCHAPTER 13  The Junction Field-Effect TransistorCHAPTER 14   Optical DeviceCHAPTER 15  Semiconductor Power DevicesAPPENDIXIdex

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