光電集成電路設(shè)計與器件建模

內(nèi)容概要

　　《光電集成電路設(shè)計與器件建模（英文版）》主要介紹微波技術(shù)在光電子集成電路設(shè)計領(lǐng)域的應(yīng)用，內(nèi)容涵蓋先進的半導(dǎo)體光電子器件建模技術(shù)、高速光發(fā)射和接收電路設(shè)計技術(shù)，器件涉及半導(dǎo)體激光器、半導(dǎo)體探測器以及多種高速半導(dǎo)體器件，特別是對于雙極晶體管和場效應(yīng)晶體管在超高速光電子集成電路中的應(yīng)用進行了詳細的討論?！　　豆怆娂呻娐吩O(shè)計與器件建模（英文版）》在微波器件建模技術(shù)和光電子集成電路設(shè)計之間架起了一座學(xué)科貫通的橋梁，非常適合微波射頻領(lǐng)域和光電子領(lǐng)域的高年級本科生、研究生和科研工作人員入門學(xué)習(xí)。

作者簡介

　　高建軍，華東師范大學(xué)教授，博士生導(dǎo)師，“紫江學(xué)者”特聘教授，中國科學(xué)院微電子研究所客座教授，中國電子學(xué)會高級會員，IEEE高級會員，2005年入選教育部“新世紀人才支持計劃”。任多個國際微波學(xué)術(shù)刊物的編委和審稿人，出版學(xué)術(shù)專著5部，發(fā)表SCI論文40篇，EI論文40篇。

書籍目錄

PrefaceAbout the Author1  NomenclatureIntroduction1.1  Optical Communication System1.2  Optoelectronic Integrated Circuit Computer-Aided Design1.3  Organization of This BookReferences2  Basic Concept of Semiconductor Laser Diodes2.1  Introduction2.2  Basic Concept2.2.1  Atom Energy2.2.2  Emission and Absorption2.2.3  Population Inversion2.3  Structures and Types2.3.1  Homojunction and Heterojunction2.3.2  Index Guiding and Gain Guiding2.3.3  Fabry-Perot Cavity Lasers2.3.4  Quantum-Well Lasers2.3.5  Distributed Feedback Lasers2.3.6  Vertical-Cavity Surface-Emitting Lasers2.4  Laser Characteristics2.4.1  Single-Mode Rate Equations2.4.2  Multimode Rate Equations2.4.3  Small-Signal Intensity Modulation2.4.4  Small-Signal Frequency Modulation2.4.5  Large-Signal Transit Response2.4.6  Second Harmonic Distortion2.4.7  Relative Intensity Noise2.4.8  Measurement Technique2.5  SummaryReferences3  Modeling and Parameter Extraction Techniques of Lasers3.1  Introduction3.2  Standard Double Heterojunction Semiconductor Lasers3.2.1  Large-Signal Model3.2.2  Small-Signal Model3.2.3  Noise Model3.3  Quantum-Well Lasers3.3.1  One-Level Equivalent Circuit Model3.3.2  Two-Level Equivalent Circuit Model3.3.3  Three-Level Equivalent Circuit Model3.4  Parameter Extraction Methods3.4.1  Direct-Extraction Method3.4.2  Semi-Analytical Method3.5  SummaryReferences4  Microwave Modeling Techniques of Photodiodes4.1  Introduction4.2  Physical Principles4.3  Figures of Merit4.3.1  Responsivity4.3.2  Quantum Efficiency4.3.3  Absorption Coefficient4.3.4  Dark Current4.3.5  Rise Time and Bandwidth4.3.6  Noise Currents4.4  Microwave Modeling Techniques4.4.1  PIN PD4.4.2  APD4.5  SummaryReferences5  High-Speed Electronic Semiconductor Devices5.1  Overview of Microwave Transistors5.2  FET Modeling Technique5.2.1  FET Small-Signal Modeling5.2.2  FET Large-Signal Modeling5.2.3  FET Noise Modeling5.3  GaAs/InP HBT Modeling Technique5.3.1  GaAs/InP HBT Nonlinear Model5.3.2  GaAs/InP HBT Linear Model5.3.3  GaAs/InP HBT Noise Model5.3.4  Parameter Extraction Methods5.4  SiGe HBT Modeling Technique5.5  MOSFET Modeling Technique5.5.1  MOSFET Small-Signal Model5.5.2  MOSFET Noise Model5.5.3  Parameter Extraction Methods5.6  SummaryReferences6  Semiconductor Laser and Modulator Driver Circuit Design6.1  Basic Concepts6.1.1  NRZ and RZ Data6.1.2  Optical Modulation6.1.3  Optical External Modulator6.2  Optoelectronic Integration Technology6.2.1  Monofithic Optoelectronic Integrated Circuits6.2.2  Hybrid Optoelectronic Integrated Circuits6.3  Laser Driver Circuit Design6.4  Modulator Driver Circuit Design6.4.1  FET-Based Driver Circuit6.4.2  Bipolar Transistor-Based Driver Integrated Circuit6.4.3  MOSFET-Based Driver Integrated Circuit6.5  Distributed Driver Circuit Design6.6  Passive Peaking Techniques6.6.1  Capacitive Peaking Techniques6.6.2  Inductive Peaking Techniques6.7  SummaryReferences7  Optical Receiver Front-End, Integrated Circuit Design7.1  Basic Concepts of the Optical Receiver7.1.1  Signal-to-Noise Ratio7.1.2  Bit Error Ratio7.1.3  Sensitivity7.1.4  Eye Diagram7.1.5  Signal Bandwidth7.1.6  Dynamic Range7.2  Front-End Circuit Design7.2.1  Hybrid and Monolithic OEIC7.2.2  High-Impedance Front-End7.2.3  Transimpedance Front-End7.3  Transi-mpedance Gain and Equivalent Input Noise Current7.3.1  S Parameters of a Two-Port Network7.3.2  Noise Figure of a Two-Port Network7.3.3  Transimpedance Gain7.3.4  Equivalent Input Noise Current7.3.5  Simulation and Measurement of Transimpedance Gain and Equivalent Input Noise Current7.4  Transimpedance Amplifier Circuit Design7.4.1  BJT-Based Circuit Design7.4.2  HBT-Based Circuit Design7.4.3  FET-Based Circuit Design7.4.4  MOSFET-Based Circuit Design7.4.5  Distributed Circuit Design7.5  Passive Peaking Techniques7.5.1  Inductive Peaking Techniques7.5.2  Capacitive Peaking Techniques7.6  Matching Techniques7.7  SummaryReferencesIndex

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