質(zhì)譜

內(nèi)容概要

　　《質(zhì)譜(原著第2版)(英文版)》作為一部成功的教科書，其全新修訂的第2版在內(nèi)容上得以充分的擴(kuò)展，以其詳盡和準(zhǔn)確的敘述，精美的插圖和照片為讀者津津樂道。?新增串級(jí)質(zhì)譜法，涵蓋了儀器設(shè)備、離子激活方法（CID，ECD，ETD，IRMPD）及其應(yīng)用?新增敞開式質(zhì)譜（DART，DESI等），新增無機(jī)質(zhì)譜，包含元素形態(tài)分析和成像，?新增了所有章節(jié)的學(xué)習(xí)目標(biāo)，新增先進(jìn)儀器介紹，諸如orbitraps、線性離子阱、串級(jí)TOFs、FT-ICR，以及各種聯(lián)用儀器。JurgenH.Gross對(duì)書中的概念、方法和技術(shù)做出了深入的闡述。指導(dǎo)學(xué)生和專業(yè)人員從新手逐步成長為質(zhì)譜應(yīng)用的行家里手。JurgenH.Gross首先介紹了氣相離子化學(xué)原理、同位素組成和精確質(zhì)量，然后是各種質(zhì)量分析器和離子化方法的設(shè)計(jì)，最后是質(zhì)譜圖的解析和聯(lián)用技術(shù)。可以說《質(zhì)譜(原著第2版)(英文版)》是實(shí)用信息和基于豐富文獻(xiàn)的理論知識(shí)的完美結(jié)合。

作者簡(jiǎn)介

作者：(德國)格羅斯(Gross Jürgen H)

書籍目錄

Table of Contents
1 Introduction
　Learning Objectives
　1.1 Aims and Scope
　1.1.1 Filling the Black Box
　1.2 What Is Mass Spectrometry？
　1.2.1 Mass Spectrometry
　1.2.2 Mass Spectrometer
　1.2.3 Mass Scale
　1.2.4 Mass Spectrum
　1.3 Ion Chromatograms
　1.4 Performance of Mass Spectrometers
　1.4.1 Sensitivity
　1.4.2 Detection Limit
　1.4.3 Signal-to-Noise Ratio
　1.5 Terminology - General Aspects
　1.5.1 Basic Terminology in Describing Mass Spectra
　1.6 Units, Physical Quantities, and Physical Constants
　References
2 Principles of Ionization and Ion Dissociation
　Learning Objectives
　2.1 Gas Phase Ionization by Energetic Electrons
　2.1.1 Formation of Ions
　2.1.2 Processes Accompanying Electron Ionization
　2.1.3 Ions Generated by Penning Ionization
　2.1.4 Ionization Energy
　2.1.5 Ionization Energy and Charge-Localization
　2.2 Vertical Transitions
　2.3 Ionization Efficiency and Ionization Cross Section
　2.4 Internal Energy and the Further Fate of Ions
　2.4.1 Degrees of Freedom
　2.4.2 Appearance Energy
　2.4.3 Bond Dissociation Energies and Heats of Formation
　2.4.4 Randomization of Energy
　2.5 Quasi-Equilibrium Theory
　2.5.1 QET's Basic Premises
　2.5.2 Basic QET
　2.5.3 Rate Constants and Their Meaning
　2.5.4 k（E） Functions - Typical Examples
　2.5.5 Reacting Ions Described by k（E）Functions
　2.5.6 Direct Cleavages and Rearrangement Fragmentations
　2.6 Time Scale of Events
　2.6.1 Stable, Metastable, and Unstable Ions
　2.6.2 Time Scale of Ion Storage Devices
　2.7 Internal Energy - Practical Implications
　2.8 Reverse Reactions and Kinetic Energy Release
　2.8.1 Activation Energy of the Reverse Reaction
　2.8.2 Kinetic Energy Release
　2.8.3 Energy Partitioning
　2.9 Isotope Effects
　2.9.1 Primary Kinetic Isotope Effects
　2.9.2 Measurement of Isotope Effects
　2.9.3 Secondary Kinetic Isotope Effects
　2.10 Determination of Ionization Energies
　2.10.1 Conventional Determination of Ionization Energies
　2.10.2 Improved IE Accuracy from Data Post-Processing
　2.10.3 IE Accuracy - Experimental Improvements
　2.10.4 Photoionization Processes
　2.11 Determining the Appearance Energies
　2.11.1 Kinetic Shift
　2.11.2 Breakdown Graphs
　2.12 Gas Phase Basicity and Proton Affinity
　References
3 Isotopic Composition and Accurate Mass
　Learning Objectives
　3.1 Isotopic Classification of the Elements
　3.1.1 Monoisotopic Elements
　3.1.2 Di-isotopic Elements .
　3.1.3 Polyisotopic Elements
　3.1.4 Representation of Isotopic Abundances
　3.1.5 Calculation of Atomic, Molecular, and Ionic Mass
　3.1.6 Natural Variations in Relative Atomic Mass
　3.2 Calculation of Isotopic Distributions
　3.2.1 Carbon: An X+I Element
　……
4 Instrumentation
5 Practical Aspects of Electron Ionization...
6 Fragmentation of Organic Ions and Interpretation of E1 Mass
Spectra
7 Chemical Ionization
8 Field Ionization and Field Desorption
9 Tandem Mass Spectrometry
10 Fast Atom Bombardment
11 Matrix-Assisted Laser Desorption/Ionization
12 Electrospray Ionization
13 Ambient Mass Spectrometry
14 Hyphenated Methods
15 Inorganic Mass Spectrometry
Appendix
Subject Index

章節(jié)摘錄

版權(quán)頁：插圖：Applied to solid materials, especially semiconductors and thin films, SIMS candetermine trace levels of all elements in the periodic table. Spatial microanalysis isprovided by collimating the primary ion beam to about 1 prn in diameter and con-trol of where the beam strikes the sample surface. This way, SIMS provides lateraland depth distributions of these elements within the sample. Currently, SIMS isbeing adapted to achieve lateral resolutions well below 100 nm. The driving forcecomes from the progress in microelectronics aiming at structures that approach10 nm. Also, the depth resolution needs to come close to the atomic scale.SIMS surface analysis is classified into two modes of operation, the so-calledstatic SIMS and dynamic SIMS mode. Static SIMS employs an extremely lowsputtering rate, often with a pulsed primary ion beam, for better sensibility to thecharacteristics of the top monolayer and even may reveal molecular information（see below）.

媒體關(guān)注與評(píng)論

“……截至目前我見過的最好的質(zhì)譜教科書之……”　　——International Journal of Mass Spectrometry“這是一本很好的現(xiàn)代質(zhì)譜教科書……如此系統(tǒng)的質(zhì)譜教科書國內(nèi)尚不多見，尤其是對(duì)質(zhì)譜新技術(shù)的介紹值得稱道……”　　——?jiǎng)⒒⑼本┐髮W(xué)化學(xué)與分子工程學(xué)院

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《質(zhì)譜(原著第2版)(英文版)》是國外化學(xué)經(jīng)典教材系列之一。

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