出版時間:2011-9 出版社:科學(xué)出版社 作者:張薩姆 頁數(shù):410
內(nèi)容概要
本書著重討論了薄膜的功能特性(例如,光學(xué)、電子、電學(xué)特性等),同時介紹了相應(yīng)的器件及應(yīng)用。
本書首先介紹功能薄膜大尺度制作與加工的化學(xué)途徑,納米復(fù)合材料薄膜的制作與表征。其次講解了低維納米復(fù)合材料的制作及其應(yīng)用,硅納米晶的光學(xué)和光電子學(xué)特性。最后介紹了可控微/納米結(jié)構(gòu)薄膜和器件,微系統(tǒng)應(yīng)用的薄膜形狀記憶合金等內(nèi)容。
本書內(nèi)容十分全面,不僅包含適合新入門者的對于細(xì)節(jié)的解釋,也包括適合專家的最新前沿研究進(jìn)展及資料。書中涵蓋寬廣范圍的機(jī)械及功能技術(shù),包括其在清潔能源領(lǐng)域的應(yīng)用,這有助于研究并便于專業(yè)人員對這一迅速發(fā)展的領(lǐng)域有全面的了解和把握。本書由(新加坡)張薩姆
(Sam Zhang)著,
書籍目錄
前言
編者
貢獻(xiàn)者
1 利用化學(xué)途徑藉由納米構(gòu)筑實(shí)現(xiàn)功能薄膜的大尺度制作與加工
2 SiC納米結(jié)構(gòu)/納米復(fù)合材料薄膜的制備和表征
3 低維納米復(fù)合材料的制備和應(yīng)用
4 嵌入Si02基體中的硅納米晶的光學(xué)和光電子學(xué)特性
5 嵌入非晶態(tài)Si02薄膜中的硅納米晶的電學(xué)性能
6 溶膠凝膠法得到的納米結(jié)構(gòu)薄膜的性質(zhì)和應(yīng)用:光學(xué)領(lǐng)域
7 可控微/納米結(jié)構(gòu)薄膜和器件
8 微系統(tǒng)應(yīng)用的薄膜形狀記憶合金
索引
章節(jié)摘錄
Top-down approaches consist of either using macroscopic tools to directly "write" materials on a substrate, or using macroscopic tools to transfer a computer-generated pattern onto the thin film material, and then "sculpting" a nanostructure by physically removing material (e.g., by etching techniques). It should be noted that either the solution/material to be used in the printing techniques, or the films to be "sculpted" may be prepared via sol-gel. The former case includes scanning tunneling microscopy (STM), scanning probe lithography (SPL), nanoimprint lithography (NIL), and microcontact printing uCP). STM allows the position of individual atoms to pattern structures with subnanometer precision, and SPL leads to features as small as 15 nm. uCP allows conformal contact between the stamp and the substrate for a range of topologies, including curved substrates/inner surfaces, due to the mechanical flexibility of the rubbery stamp. The imprinting device used in the NIL approach can be reused numerous times, leading to cost-effective, sub-100nm lithographic replication; however, the initial fabrication of the ultrahigh-resolution master molds remains very difficult to attain. It should be noted that these techniques, which allow the patterning of structures with nanometer precision, are neither cost- nor time-effective.62 The most common techniques used in the latter case ("sculpting" a nanostructure) are based on photolithography, which is unfortunately limited by optical diffraction effects to 200-500nm, and nanolitography (electron- and ion-based methods), which already allow the preparation of ordered nanostructured arrays with high resolution, but have low throughput, since they consist of a lineby-line pattern. ……
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