納米制造手冊

出版時間:2011-4  出版社:科學(xué)出版社  作者:維德雷希特 編  頁數(shù):296  

內(nèi)容概要

現(xiàn)代工業(yè)使用的眾多器件和系統(tǒng)變得越來越小,有的達(dá)到納米尺寸級別。納米制造的目標(biāo)在于構(gòu)建大量高效低成本的用在組件、器件和系統(tǒng)中的納米結(jié)構(gòu)。納米制造是所有納米技術(shù)領(lǐng)域的關(guān)鍵所在,特別是納米技術(shù)在傳統(tǒng)的工程和科學(xué)領(lǐng)域應(yīng)用方面。本書覆蓋了最重要的納米制造技術(shù),每章都全面介紹了一種納米制造技術(shù)。適合化工、材料、物理等相關(guān)專業(yè)的人員閱讀。

作者簡介

編者:(美國)維德雷希特(Gary Wiederrecht)

書籍目錄

編輯顧問委員
前言
編者
1 納米結(jié)構(gòu)的定向組裝 J M MACLEOD,Università degli studi di
Trieste,Trieste,Italy F ROSEI,Université du
Québec,Varennes,QC,Canada
2 有序納米顆粒超結(jié)構(gòu)的生物調(diào)控組裝 W L CHENG,S J TAN,M J CAMPOLONGO,M R HARTMAN,J S
KAHN and D LUO,Cornell University,Ithaca,NY,USA
3 表面的手性分子 C J BADDELEY,University of St.Andrews,St.Andrews,UK G
HELD,University of Reading,Reading,UK
4 納米結(jié)構(gòu)的電子束光刻 D M TENNANT and A R BLEIER,Cornell
University,Ithaca,NY,USA
5 紫外壓印光刻在納米制造中的現(xiàn)狀 J CHOI,P SCHUMAKER and F XU,Molecular
Imprints,Inc., Austin,TX,USA S V SREENIVASAN,Molecular
Imprints,Inc.,Austin,TX,USA,University of Texas at
Austin,Austin,TX,USA
6 皮升印刻 E GILI,M CAIRONI and H SIRRINGHAUS,University of
Cambridge,Cambridge,UK
7 分子印刻板:從超分子化學(xué)到納米制造 R SALVIO,J HUSKENS and D N REINHOUDT,University
of Twente,Enschede,The Netherlands
8 分子機(jī)械和馬達(dá) A CREDI,Università di Bologna,Bologna,Italy
索引

章節(jié)摘錄

版權(quán)頁:插圖:More specifically, functional inks have enabled awide range of applications in the area of displays andmicroelectronics. For example, light emitting poly-mers (LEPs) have been printed to fabricate polymerlight emitting diodes (PLEDs) [4]. Bottom-gateorganic field effect transistors have also been fabri-cated depositing all the active materials(semiconductor, gate dielectric, and electrodes)using lithography-free printing techniques [5,6].Nevertheless, the development of highly conductive,printable inks necessary to fabricate conductor lineswith low parasitics has proved challenging. Recently,the introduction of inks containing metal nanoparti-cles or metal-containing organic complexes hasallowed to print lines with high conductivity usinglow-temperature processes. In the following, we willdiscuss the different types of metal inks available fordisplay and microelectronic applications. Among the large range of applications of ink-jetprinting of functional materials, in this work we willfocus on display applications (organic light emittingdiodes (OLEDs), liquid crystal displays (LCDs)) andon electronic applications (active matrix backplanes,sensors, radio frequency identification tags (RFIDs),digital lithography and ink-jet etching). It will beclear that for this range of applications the mainfundamental limitation of ink-jet printing is theintrinsic low resolution of the technique. On theother hand, from a manufacturing point of view ithas proven difficult to achieve high yield and deposi-tion uniformity to transfer ink-jet printed electronicdevices to the production floor. In order to improvethe resolution of ink-jet printing, for example, inorder to print short-channel field effect transistors(FETs), a novel approach will be reviewed. This is aself-aligned technique that relies on the movement ofa droplet on a substrate, induced by forces exerted onthe ink by a contrast in surface energy. This can beachieved by pre-patterning high-resolution struc-tures defining areas with different surface energy ona substrate. An alternative, lithography-free approachwill also be discussed.

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《納米制造手冊》為納米科學(xué)進(jìn)展系列之一。

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