納米薄膜分析基礎

前言

對于國內的物理學工作者和青年學生來講，研讀國外優(yōu)秀的物理學著作是系統(tǒng)掌握物理學知識的一個重要手段。但是，在國內并不能及時、方便地買到國外的圖書，且國外圖書不菲的價格往往令國內的讀者卻步，因此，把國外的優(yōu)秀物理原著引進到國內，讓國內的讀者能夠方便地以較低的價格購買是一項意義深遠的工作，將有助于國內物理學工作者和青年學生掌握國際物理學的前沿知識，進而推動我國物理學科研和教學的發(fā)展。為了滿足國內讀者對國外優(yōu)秀物理學著作的需求，科學出版社啟動了引進國外優(yōu)秀著作的工作，出版社的這一舉措得到了國內物理學界的積極響應和支持，很快成立了專家委員會，開展了選題的推薦和篩選工作，在出版社初選的書單基礎上確定了第一批引進的項目，這些圖書幾乎涉及了近代物理學的所有領域，既有闡述學科基本理論的經典名著，也有反映某一學科專題前沿的專著。在選擇圖書時，專家委員會遵循了以下原則：基礎理論方面的圖書強調“經典”，選擇了那些經得起時間檢驗、對物理學的發(fā)展產生重要影響、現(xiàn)在還不“過時”的著作(如：狄拉克的《量子力學原理》)。反映物理學某一領域進展的著作強調“前沿”和“熱點”，根據國內物理學研究發(fā)展的實際情況，選擇了能夠體現(xiàn)相關學科最新進展，對有關方向的科研人員和研究生有重要參考價值的圖書。這些圖書都是最新版的，多數圖書都是2000年以后出版的，還有相當一部分是2006年出版的新書。因此，這套叢書具有權威性、前瞻性和應用性強的特點。由于國外出版社的要求，科學出版社對部分圖書進行了少量的翻譯和注釋(主要是目錄標題和練習題)，但這并不會影響圖書“原汁原味”的感覺，可能還會方便國內讀者的閱讀和理解?！八街?，可以攻玉”，希望這套叢書的出版能夠為國內物理學工作者和青年學生的工作和學習提供參考，也希望國內更多專家參與到這一工作中來，推薦更多的好書。

內容概要

　　現(xiàn)代科學技術（從材料科學到集成電路）已深入到納米層次。從薄膜到場效應傳感器，研究的重點是如何把尺度從微米量級減小到納米量級。納米薄膜分析一書主要研究了材料表面及從表面到幾十乃至100納米深的結構與構成。主要討論了用入射粒子和光子來量化結構并進行成分和深度分析的材料表征方法。　　本書討論了通過入射光子或粒子刻蝕納米材料來表征材料的方法，入射的粒子能夠激發(fā)出可測的粒子或光子，這正是表征材料的依據，納米尺度材料分析實驗會用到大量入射粒子與待測粒子束的相互作用。其中較重要的有原子碰撞、盧瑟福背散射、離子遂道、衍射、光子吸收、輻射與非輻射陽縣躍遷以及核反應。本書詳細介紹了各種分析和掃描探針顯微技術。

作者簡介

作者：(美國)阿爾弗德(T.J.Alford)

書籍目錄

Preface1. An Overview：Concepts，Units，and the Bohr Atom  1.1 Introduction  1.2 Nomenclature  1.3 Energies，Units，and Particles  1.4 Particle-Wave Duality and Lattice Spacing  1.5 The Bohr Model  Problems2. Atomic Collisions and Backscattering Spectrometry  2.1 Introduction  2.2 Kinematics of Elastic Collisions  2.3 Rutherford Backscattering Spectrometry  2.4 Scattering Cross Section and Impact Parameter  2.5 Central Force Scattering  2.6 Scattering Cross Section：Two-Body  2.7 Deviations from Rutherford Scattering at Low and High Energy  2.8 Low-Energy Ion Scattering  2.9 Forward Recoil Spectrometry  2.10 Center of Mass to Laboratory Transformation  Problems3. Energy Loss of Light Ions and Backscattering Depth Profiles  3.1 Introduction  3.2 General Picture of Energy Loss and Units of Energy Loss  3.3 Energy Loss of MeV Light Ions in Solids  3.4 Energy Loss in Compounds Bragg's Rule  3.5 The Energy Width in Backscattering  3.6 The Shape of the Backscattering Spectrum  3.7 Depth Profiles with Rutherford Scattering  3.8 Depth Resolution and Energy-Loss Straggling  3.9 Hydrogen and Deuterium Depth Profiles  3.10 Ranges of H and He Ions  3.11 Sputtering and Limits to Sensitivity  3.12 Summary of Scattering Relations  Problems4. Sputter Depth Profiles and Secondary Ion Mass Spectroscopy  4.1 Introduction  4.2 Sputtering by Ion Bombardment—General Concepts  4.3 Nuclear Energy Loss  4.4 Sputtering Yield  4.5 Secondary Ion Mass Spectroscopy (SIMS)  4.6 Secondary Neutral Mass Spectroscopy (SNMS)   4.7 Preferential Sputtering and Depth Profiles  4.8 Interface Broadening and Ion Mixing  4.9 Thomas-Fermi Statistical Model of the Atom  Problems5. Ion Channeling  5.1 Introduction  5.2 Channeling in Single Crystals  5.3 Lattice Location of Impurities in Crystals  5.4 Channeling Flux Distributions 89  5.5 Surface Interaction via a Two-Atom Model  5.6 The Surface Peak  5.7 Substrate Shadowing：Epitaxial Au on Ag(111)   5.8 Epitaxial Growth  5.9 Thin Film Analysis  Problems6. Electron-Electron Interactions and the Depth Sensitivity of Electron Spectroscopies  6.1 Introduction  6.2 Electron Spectroscopies：Energy Analysis  6.3 Escape Depth and Detected Volume  6.4 Inelastic Electron-Electron Collisions  6.5 Electron Impact Ionization Cross Section  6.6 Plasmons  6.7 The Electron Mean Free Path  6.8 Influence of Thin Film Morphology on Electron Attenuation  6.9 Range of Electrons in Solids  6.10 Electron Energy Loss Spectroscopy (EELS)  6.11 Bremsstrahlung  Problems7. X-ray Diffraction  7.1 Introduction  7.2 Bragg's Law in Real Space  7.3 Coefficient of Thermal Expansion Measurements  7.4 Texture Measurements in Polycrystalline Thin Films  7.5 Strain Measurements in Epitaxial Layers  7.6 Crystalline Structure  7.7 Allowed Reflections and Relative Intensities  Problems8. Electron Diffraction  8.1 Introduction  8.2 Reciprocal Space  8.3 Laue Equations  8.4 Bragg's Law  8.5 Ewald Sphere Synthesis  8.6 The Electron Microscope  8.7 Indexing Diffraction Patterns  Problems9. Photon Absorption in Solids and EXAFS  9.1 Introduction  9.2 The Schrodinger Equation  9.3 Wave Functions  9.4 Quantum Numbers，Electron Configuration,and Notation  9.5 Transition Probability  9.6 Photoelectric Effect Square-Well Approximation  9.7 Photoelectric Transition Probability for a Hydrogenic Atom  9.8 X-ray Absorption  9.9 Extended X-ray Absorption Fine Structure (EXAFS)  9.10 Time-Dependent Perturbation Theory  Problems10. X-ray Photoelectron Spectroscopy  10.1 Introduction  10.2 Experimental Considerations  10.3 Kinetic Energy of Photoelectrons  10.4 Photoelectron Energy Spectrum  10.5 Binding Energy and Final-State Effects  10.6 Binding Energy Shifts—Chemical Shifts  10.7 Quantitative Analysis  Problems11. Radiative Transitions and the Electron Microprobe  11.1 Introduction  11.2 Nomenclature in X-Ray Spectroscopy  11.3 Dipole Selection Rules  11.4 Electron Microprobe  11.5 Transition Rate for Spontaneous Emission  11.6 Transition Rate for Kα Emission in Ni  11.7 Electron Microprobe：Quantitative Analysis  11.8 Particle-Induced X-Ray Emission (PIXE)  11.9 Evaluation of the Transition Probability for Radiative Transitions  11.10 Calculation of the Kβ/Kα Ratio  Problems12. Nonradiative Transitions and Auger Electron Spectroscopy  12.1 Introduction  12.2 Auger Transitions  12.3 Yield of Auger Electrons and Fluorescence Yield  12.4 Atomic Level Width and Lifetimes  12.5 Auger Electron Spectroscopy  12.6 Quantitative Analysis  12.7 Auger Depth Profiles  Problems13. Nuclear Techniques：Activation Analysis and Prompt Radiation Analysis  13.1 Introduction  13.2 Q Values and Kinetic Energies  13.3 Radioactive Decay  13.4 Radioactive Decay Law  13.5 Radionuclide Production  13.6 Activation Analysis  13.7 Prompt Radiation Analysis  Problems14. Scanning Probe Microscopy  14.1 Introduction  14.2 Scanning Tunneling Microscopy  14.3 Atomic Force MicroscopyAppendix 1. Km for 4He+ as Projectile and Integer Target MassAppendix 2. Rutherford Scattering Cross Section of the Elements for 1 MeV4HeiAppendix 3. 4He+ Stopping Cross SectionsAppendix 4. Electron Configurations and Ionization Potentials of AtomsAppendix 5. Atomic Scattering FactorsAppendix 6. Electron Binding EnergiesAppendix 7. X-Ray Wavelengths (nm)Appendix 8. Mass Absorption Coefficient and DensitiesAppendix 9. KLL Auger Energies (eV)Appendix 10. Table of the ElementsAppendix 11. Table of Fluoresence Yields for K，L，and M ShellsAppendix 12. Physical Constants，Conversions，and Useful CombinationsAppendix 13. AcronymsIndex

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《納米薄膜分析基礎17(影印版)》主要研究了材料表面及從表面到幾十乃至100納米深的結構與構成。主要討論了用入射粒子和光子來量化結構并進行成分和深度分析的材料表征方法以及詳細介紹了各種分析和掃描探針顯微技術?！都{米薄膜分析基礎17(影印版)》可供物理學工作者參考學習。

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