半導(dǎo)體物理電子學(xué)

內(nèi)容概要

　　本書(shū)全面介紹了半導(dǎo)體物理的基本內(nèi)容，這些內(nèi)容是理解半導(dǎo)體的物理性質(zhì)和光電器件制備原理的基礎(chǔ)。本書(shū)系統(tǒng)性強(qiáng)，合理地安排了物理原理，表征法以及半導(dǎo)體材料和器件的應(yīng)用等內(nèi)容，兼顧了物理學(xué)家、材料學(xué)家和設(shè)備工程師的需求。本書(shū)反映了半導(dǎo)體技術(shù)在過(guò)去十年的進(jìn)步，包括許多新出現(xiàn)并已進(jìn)入市場(chǎng)的半導(dǎo)體器件。本書(shū)適合于電子工程，材料科學(xué)，物理和化學(xué)工程的研究生，也可供半導(dǎo)體工業(yè)的過(guò)程工程師和設(shè)備工程師參考。

作者簡(jiǎn)介

作者：(美國(guó))李(Li,S.S)

書(shū)籍目錄

Preface1.Classification of Solids and Crystal Structure　1.1　Introduction　1.2　The Bravais Lattice　1.3　The Crystal Structure　1.4　Miller Indices and Crystal Planes　1.5　The Reciprocal Lattice and Brillouin Zone　1.6　Types of Crystal Bindings　1.7　Defects in a Crystalline Solid　　Problems　　Bibliography2.Lattice Dynamics　2.1　Introduction　2.2　The One-Dimensional Linear Chain　2.3　Dispersion Relation for a Three-Dimensional Lattice　2.4　The Concept of Phonons　2.5　The Density of States and Lattice Spectrum　2.6　Lattice Specific Heat　　Problems　　References　　Bibliography3.Semiconductor Statistics　3.1　Introduction　3.2　Maxwell-Boltzmann Statistics　3.3　Fermi-Dirac Statistics　3.4　Bose-Einstein Statistics　3.5　Statistics for the Shallow-Impurity States in a Semiconductor　　Problems　　Bibliography4.Energy Band Theory　4.1　Introduction　4.2　Basic Quantum Concepts and Wave Mechanics　4.3　The Bloch-Floquet Theorem　4.4　The Kronig-Penney Model　4.5　The Nearly Free Electron Approximation　4.6　The Tight-Binding Approximation　4.7　Energy Band Structures for Some Semiconductors　4.8　The Effective Mass Concept for Electrons and Holes　4.9　Energy Band Structures and Density of States for Low-Dimensional Systems　　Problems　　References　　Bibliography5.Equilibrium Properties of Semiconductors　5.1　Introduction　5.2　Densities of Electrons and Holes in a Semiconductor　5.3　Intrinsic Semiconductors　5.4　Extrinsic Semiconductors　5.5　Ionization Energies of Shallow-and Deep-Level Impurities　5.6　Hall Effect,Electrical Conductivity,and Hall Mobility　5.7　Heavy Doping Effects in a Degenerate Semiconductor　　Problems　　References　　Bibliography6.Excess Carrier Phenomenon in Semiconductors　6.1　Introduction　6.2　Nonradiative Recombination: The Shockley-Read-Hall Model　6.3　Band-to-Band Radiative Recombination　6.4　Band-to-Band Auger Recombination　6.5　Basic Semiconductor Equations　6.6　The Charge-Neutrality Equation　6.7　The Haynes-Shockley Experiment　6.8　The Photoconductivity Decay Experiment　6.9　Surface States and Surface Recombination Velocity　6.10 Deep-Level Transient Spectroscopy Technique　6.11 Surface Photovoltage Technique　　Problems　　References　　Bibliography7.Transport Properties of Semiconductors8.Scattering Mechanisms and Carrier Moblities in Semiconductors9.Optical Properties and Photoelectric Effects10.Metal-Semiconductor Contacts11.P-n Junction Diodes12.Solar Cells and Photodetectors13.Light-Emitting Devices14.Bipolar Juction Transistors15.Metal-Oxide-Semiconductor Field-Effect Transistors16.High-Speed Ⅲ-Ⅴ Semiconductor DevicesSolutions to Selected ProblemsAppendix Index

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《半導(dǎo)體物理電子學(xué)(第2版)》適合于電子工程，材料科學(xué)，物理和化學(xué)工程的研究生，也可供半導(dǎo)體工業(yè)的過(guò)程工程師和設(shè)備工程師參考。

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