納米晶體管

內(nèi)容概要

近幾十年來，晶體管的尺度發(fā)展一直是推動電子學(xué)的動力，各種分子尺度的器件已經(jīng)出現(xiàn)，甚至有取代硅晶體管的趨勢。本書詳細(xì)介紹了納米晶體管的理論、建模與仿真，內(nèi)容包括彈道納米晶體管的彈道傳輸和量子效應(yīng)，MOSFET的散射理論等。為了詳細(xì)說明納米晶體管，本書還提供了已被詳盡數(shù)值仿真所證實(shí)的物理圖片及半解析模型。 　　本書可供從事納米電子器件領(lǐng)域的電子工程師、物理學(xué)者和化學(xué)家參考。

書籍目錄

Preface1） Basic Concepts　1.1 Introduction　1.2 Distribution functions　1.3 3D, 2D, and 1D Carriers　1.4 Density of states　1.5 Carrier densities　1.6 Directed moments　1.7 Ballistic transport: semiclassical　1.8 Ballistic transport: quantum　1.9 The NEGF formalism　1.10 Scattering　1.11 Conventional transport theory　1.12 Resistance of a ballistic conductor　1.13 Coulomb blockade　1.14 Summary2） Devices, Circuits and Systems　2.1 Introduction　2.2 The MOSFET　2.3 1D MOS Electrostatics　2.4 2D MOS Electrostatics　2.5 MOSFET Current-Voltage Characteristics　2.6 The bipolar transistor　2.7 CMOS Technology　2.8 Ultimate limits　2.9 Summary3） The Ballistic Nanotransistors　3.1 Introduction　3.2 Physical view of the nanoscale MOSFETs　3.3 Natori's theory of the ballistic MOSFET　3.4 Nondegenerate, degenerate, and general carrier statistics　　3.4.1 The ballistic MOSFET (nondegenerate conditions）　　3.4.2 The ballistic MOSFET (TL = 0, degenerate conditions）　　3.4.3 The ballistic MOSFET (general conditions）　3.5 Beyond the Natori model　　3.5.1 Role of the quantum capacitance　　3.5.2 Two dimensional electrostatics　3.6 Discussion　3.7 Summary4） Scattering Theory of the MOSFET　4.1 Introduction　4.2 MOSFET physics in the presence of scattering　4.3 The scattering model　4.4 The transmission coefficient under low drain bias　4.5 The transmission coefficient under high drain bias　4.6 Discussion　4.7 Summary5） Nanowire Field-Effect Transistors　5.1 Introduction　5.2 Silicon nanowire MOSFETs　　5.2.1 Evaluation of the I-V characteristics　　5.2.2 The I-V characteristics for nondegenerate carrier statistics　　5.2.3 The I-V characteristics for degenerate carrier statistics　　5.2.4 Numerical results　5.3 Carbon nanotubes　5.4 Bandstructure of carbon nanotubes　　5.4.1 Bandstructure of graphene　　5.4.2 Physical structure of nanotubes　　5.4.3 Bandstructure of nanotubes　　5.4.4 Bandstructure near the Fermi points　5.5 Carbon nanotube FETs　5.6 Carbon nanotube MOSFETs　5.7 Schottky barrier carbon nanotube FETs　5.8 Discussion　5.9 Summary6） Transistors at the Molecular Scale　6.1 Introduction　6.2 Electronic conduction in molecules　6.3 General model for ballistic nanotransistors　6.4 MOSFETs with 0D, 1D, and 2D channels　6.5 Molecular transistors?　6.6 Single electron charging　6.7 Single electron transistors　6.8 SummaryINDEX

圖書封面

評論、評分、閱讀與下載

---

    納米晶體管 PDF格式下載

---