模擬/射頻集成電路設計的晶體管級建模

內容概要

器件的模型一直是模擬／射頻集成電路工程師關心的問題。是否能建立一個盡可能反映器件行為的模型關系到整個集成電路設計的成敗。本書內容豐富，從主流模型的討論到小尺寸器件模型和量子效應的介紹，從模型參數的提取方法到模型在硬件描述語言中的應用等方面都作了詳細的論述。本書對設計工程師和器件工程師都有很好的參考價值。

書籍目錄

ForewordHiroshi IwaiIntroductionWladek Grabinski, Bart Nauwelaers and Dominique Schreurs1 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures  Daniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno2 PSP: An advanced surface-potential-based MOSFET model  R. van Langevelde, and G. Gildenblat3 EKV3.0: An advanced charge based MOS transistor model. A design-oriented MOS transistor compact model for next generation CMOS  Matthias Bucher, Antonios Bazigos, Francois Krummenacher,Jean-Micehl Sallese, and Christian Enz4 Modelling using high-frequency measurements  Dominique Schreurs5 Empirical FET models  Iltcho Angelov6 Modeling the SOI MOSFET nonlinearities. An empirical approach  B. Parvais, A. Siligaris7 Circuit level RF modeling and design   Nobuyuki Itoh8 On incorporating parasitic quantum effects in classical circuit simulations  Frank Felgenhauer, Maik Begoin and Wolfgang Mathis9 Compact modeling of the MOSFET in VHDL-AMS  Christophe Lallement, Francois Pecheux, Alain Vachoux and Fabien Pregaldiny10 Compact modeling in Verilog-A  Boris Troyanovsky, Patrick O'Halloran and Marek MierzwinskiIndex

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